Extracting band-tail interface state densities from measurements and modelling of space charge layer resistance

Dielectric-silicon interfaces are becoming ever more important to device performance. Charge inside a surface dielectric layer is neutralized in Si leading an accumulation or inversion of free carriers. Additionally, states at the interface occupied by charges via Shockley-Read-Hall carrier statistics. It accepted that density charge near midgap, which can only reach concentration as high states, Dit, has minor effect on band bending compared for well passivated interface. Here, we show it state edge what plays major role. We conclude this comparing our measurements with modelling Si/SiO2 measure wafer sheet resistance while applying various amounts positive passivating n-type wafer, and then reproduce measured values using simulations. This indicates Dit midgap indeed change, total amount tail significant impact distribution induced test model detect acceptor-like band-tails oxide silicon different processing. discuss analyse limitations technique. While report due its relevance photovoltaics, method be used study properties other semiconductor-dielectric interfaces. As such work importance across optoelectronic devices.